类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H32M32LFCM-6 IT:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
IS43TR16512AL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
MT48LC8M16A2F4-75:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
S25FL129P0XNFI001MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT71V416S12PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT29F2G08ABAEAH4:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
IS42S32800B-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90LFBGA |
|
R1RP0416DSB-2PR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
RM3005-XSNI-TAdesto Technologies |
IC EEPROM 128KBIT SPI 1MHZ 8SOIC |
|
IDT71V3558S100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT24C64AN-10SU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS42S16800D-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT46V32M16TG-75 L:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |