类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V25761SA183BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V631S12PRFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
IS45S16320B-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
93LC86A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
SST25PF040CT-40V/NP18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8USON |
|
IS61QDB42M18-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
W25Q64FVSFIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
M25PE16-VMP6GMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8VDFPN |
|
W632GG8KB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
PC28F640P30T85B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
AT25080B-SSPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |
|
71342SA45J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
S25FL032P0XMFV013Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD I/O 8SO |