English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 256Mb (8M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 2.3V ~ 3V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70914S20PF8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
IS61VPS51236A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7025S17JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IS42S16400F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
70121L35J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
MT29F256G08CEEABH6-12:A TRMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
NM27C010T200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT28C64-25TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
70V3319S166PRF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
S29GL032N90DFBR20Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
IDT71V632S6PFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
709279S9PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M29W640GL70ZF6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
