类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71016S15PHI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IDT71V424YS12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
7054S20PRFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |
|
MT29F2G16ABDHC-ET:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
AT49F001T-12JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
PC28F128P33TF60E TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
M29F400BB55N6T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT28C64-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
70V9079S7PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT29E128G08CECDBJ4-6:D TRMicron Technology |
IC FLSH 128GBIT PARALLEL 132VBGA |
|
MT53E384M32D2DS-046 WT:E TRMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
SST25VF020B-80-4C-Q3AERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8USON |
|
CY7C199CN-12VXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |