English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 36Mb (4M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 375 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43TR16640B-125JBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
R1EX24008ASAS0I#U0Renesas Electronics America |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
N25Q064A13ESF42F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 16SO W |
|
24FC1026T-I/STRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8TSSOP |
|
S34ML04G100BHV003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
MT44K32M18RB-125E IT:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
IS42SM32200K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
IS66WV25616BLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 4MBIT PAR 48MINIBGA |
|
AT26DF041-SUAdesto Technologies |
IC FLASH 4MBIT SPI 33MHZ 8SOIC |
|
CY7C1380C-167ACCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT47H64M8B6-25E IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71P72604S200BQI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
STK11C68-C45Cypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28CDIP |
