English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M24C08-RDS6TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
CY7C008V-25AXCCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT41K512M16HA-107 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IS62WV5128DBLL-45HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32STSOP I |
|
PC28F640P30BF65B TRFlip Electronics |
IC FLASH 64MBIT PAR 64EASYBGA |
|
IS42RM16160D-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
W25Q128JVBJMWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
MT46V128M4P-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
RMLV1616AGSD-5S2#HA1Renesas Electronics America |
IC SRAM 16MBIT PAR 52TSOP II |
|
M93S46-MN6TSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |
|
93C66AT-E/OT15KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |
|
M29W160EB70N6Micron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT29LV040A-15TURoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
