English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 4ms |
| 访问时间: | - |
| 电压 - 电源: | 1.6V ~ 5.5V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) |
| 供应商设备包: | 8-TMSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C128W-10SCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
MT45W4MW16BFB-706 WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
AT24C04-10PIRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
MT48LC8M16LFF4-8 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
AT49F002N-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT46V16M16BG-6:FMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
IS61VF102418A-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
M24C08-FMB5TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 8UFDFPN |
|
IS67WVC4M16ALL-7010BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
MT46V128M4FN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY7C1061AV33-10ZXCTCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
IS25WD040-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 80MHZ 8WSON |
|
M25P40-VMN6T TRMicron Technology |
IC FLASH 4MBIT SPI 50MHZ 8SO |
