类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W512GH70N3EMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IDT71V124SA10TYGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IDT71V67602S133BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
M29DW640F70N6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IS42S32400D-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
CY62137CV30LL-55BVXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
CY7C1021B-15VXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS42S32200E-6BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
IS61LV5128AL-10BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36MINIBGA |
|
S25FL164K0XNFA013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
M25P10-AVMN3P/XMicron Technology |
IC FLASH 1MBIT SPI 50MHZ 8SO |
|
IDT71V3557SA80BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S29GL128P90FASS90Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |