类型 | 描述 |
---|---|
系列: | GL-P |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16100F-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
MT40A512M16JY-075E IT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
S25FL204K0TMFI011Cypress Semiconductor |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
IDT71V3558XS133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
STK15C88-NF45TRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 28SOIC |
|
S30MS01GR25TFW110Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
CY7C1514KV18-300BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS42S32400B-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
U6264BDC07LLG1Alliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28DIP |
|
QMP29GL512P10TFIR20DCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
7026L35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
71024S25TYG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS45S16400F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |