类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 8ns |
访问时间: | 8 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49F001NT-55TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT27C512R-55JIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
70V18L20PFI8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
70V08S25PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS41C16100C-50TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT25160AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8MAP |
|
AT24C04A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
MT48LC8M8A2P-75:G TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
IDT71T75802S100PFGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1021CV33-12VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
M28W320FCT70ZB6EMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
CY62177ESL-55ZXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
DS2430AP/T&RMaxim Integrated |
IC EEPROM 256B 1-WIRE 6TSOC |