类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8, 16M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
709279L12PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT25QU128ABA8E12-1SIT TRMicron Technology |
IC FLASH 128MBIT SPI 24TBGA |
|
70V3319S133PRFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
AT45DB041D-SUAdesto Technologies |
IC FLASH 4MBIT SPI 66MHZ 8SOIC |
|
CY7C1441AV25-133BZXITCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS25CD025-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256KBIT SPI 8SOIC |
|
AT49BV3218T-11TIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
MT48LC2M32B2P-6 IT:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT28F008B5VG-8 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
7140LA55J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
W25X40VSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8SOIC |
|
W25Q80JVSNIQ TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8SOIC |
|
MT46V64M8P-5B L IT:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |