类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PC28F512P33TFAMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
MTFC2GMTEA-WT TRMicron Technology |
IC FLASH 16GBIT MMC 153WFBGA |
|
70V25S55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IDT71P71604S167BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
AS4C256M8D3-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
TE28F256J3D95AMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
RM25C128A-BSNC-TAdesto Technologies |
IC CBRAM 128KBIT SPI 5MHZ 8SOIC |
|
M24C64-FDW5TPSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
JS28F00AP33BFAMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AT24C64AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS61QDB41M36A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
RC28F640P33B85AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
R1LV0108ESA-7SI#B0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |