English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C027VN-15AXCCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M27C256B-70XF1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
QMPGL01GP12TFI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS25LQ512B-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI/QUAD 8SOIC |
|
S25FL164K0XMFV003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
AS4C512M8D3LB-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IS46TR16128A-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V65903S85PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT26F004-SUAdesto Technologies |
IC FLASH 4MBIT SPI 33MHZ 8SOIC |
|
MT29F4G08AACHC:CMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
TE28F128J3D75AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT29C1G12MAAIYAMR-5 AITMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
IS43TR16128B-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
