类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
W972GG6JB-25 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |
![]() |
RP-SEMC08DA1Panasonic |
IC FLASH 64GBIT EMMC 153FBGA |
![]() |
IDT7164S35YGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
![]() |
AT27C040-90JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
![]() |
IS43DR16640C-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
![]() |
N25Q00AA13GSF40GMicron Technology |
IC FLASH 1GBIT SPI 108MHZ 16SOP |
![]() |
7024L30JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
![]() |
SST26VF016BAT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
![]() |
FM25L04B-GATRCypress Semiconductor |
IC FRAM 4KBIT SPI 10MHZ 8SOIC |
![]() |
MT47H64M8B6-37E:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
STK16C88-3WF35Cypress Semiconductor |
IC NVSRAM 256KBIT PARALLEL 28DIP |
![]() |
CY7C1371D-133BGCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 119PBGA |
![]() |
AT25640N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |