类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.88 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7016S15PFRenesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
MT29F64G08CBCGBJ4-37ES:G TRMicron Technology |
IC FLASH 64GBIT PAR 132VBGA |
|
S25FL164K0XMFBQ10Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
S29GL128P10TAI013Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT53B384M32D2DS-062 AIT:B TRMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
CY7C09379V-6AXCCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IDT71016S15PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT48LC8M16A2TG-75:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
NM93CS46MSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 14SOIC |
|
93LC46AT-I/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IDT71V124SA20TYRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
N25Q256A13E12A0F TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
IS42S81600E-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |