类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V65602S100PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1415AV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS25CD512-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI 8WSON |
|
N25Q032A13ESE40FMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SOP2 |
|
IDT71P73804S167BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
AT93C56-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT46V16M16P-6T:K TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IDT71V3577SA75BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS25LP512M-RGLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 512MBIT SPI/QUAD 24TFBGA |
|
IS65WV1288FBLL-45TLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
MT29F128G08AMCABH2-10IT:A TRMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
CY7C028AV-25AXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR24L01A-WROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |