English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8, 64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C09189-9ACCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
AT24C04BN-SH-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
W25Q16CVSFIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
AT49F002T-90JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
70V24S20JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
CY7C1460AV33-167AXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
IS42VM16800G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS62WV5128DALL-55HLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
W632GG6MB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
S25FL132K0XBHI033Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
IS43DR81280B-25EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
7130LA35J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
MT48LC16M16A2BG-75:DMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
