English
简体中文
CRYSTAL 30.0000MHZ 12PF SMD
MOSFET N-CH 600V 10.6A TO262-3
BASE PLATE TOROIDS
IC SRAM 2MBIT PARALLEL 44TSOP II
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C16M16D1-5TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
AS4C256M8D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT29C512-12PCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
STK14C88-C45ICypress Semiconductor |
IC NVSRAM 256KBIT PAR 32CDIP |
|
MT47H32M16CC-5E L:BMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT28F640J3FS-115 XMET TRMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
IS42SM16200D-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
CY7C1069AV33-1XW14Cypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
M25P32-VME6TG TRMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8VDFPN |
|
MT42L128M32D2MH-3 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
AT25128N1-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 16SOIC |
|
AT93C46R-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT24C256-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |