类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 90 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7007S55PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
AT25640T1-10TC-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 14TSSOP |
|
AT25HP512W2-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 16SOIC |
|
MT48LC64M8A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT48V8M32LFF5-10 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
SST39LF020-45-4C-NHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IDT6116LA20SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IDT71V3559S85PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LF51236A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42S32160D-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
N25W128A11EF740F TRMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
CAT28C64BLI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
IDT71V016SA15PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |