REG. FUSE BLOCK, 6 POLE GROUND
FUSE BLOK CART 600V 30A DIN RAIL
CAP CER 3.3PF 100V C0G/NP0 0603
IC EEPROM 512KBIT SPI 16SOIC
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT48LC64M8A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
![]() |
MT48V8M32LFF5-10 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
SST39LF020-45-4C-NHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
![]() |
IDT6116LA20SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
![]() |
IDT71V3559S85PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
IS61LF51236A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
![]() |
IS42S32160D-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
![]() |
N25W128A11EF740F TRMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
![]() |
CAT28C64BLI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
![]() |
IDT71V016SA15PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
![]() |
R1EX24512BSAS0I#S0Renesas Electronics America |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
![]() |
AT25640AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20MHZ 8MAP |
![]() |
MT29F256G08CMHGBJ4-3RES:G TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |