English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Quad Port, Synchronous |
| 内存大小: | 1.125Mb (64K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 272-BBGA |
| 供应商设备包: | 272-PBGA (27x27) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C256M16D3LB-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AS4C2M32S-6TINTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
IDT71T75702S80BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
M27C512-70XF1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
AT24C21-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8DIP |
|
IS42S32400B-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S29AL016J55TFA020Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
PC28F256P33B85B TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
AT24C04N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
71V3559S75BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS42S32200C1-55TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
CAT28F020GI-12TSanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
THGBMNG5D1LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 32GBIT EMMC 153WFBGA |
