类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB041B-CCRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 14CBGA |
|
IS49NLC18320-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
W25Q32FVZPJQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
7027S55PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
SST39SF040-45-4I-NHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
AT45DB021B-RIRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 28SOIC |
|
CY14B256K-SP45XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
IS46TR81280B-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
AT27BV1024-90VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
M29F800FT55M3E2Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
MT46H16M16LFBF-5:HMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
MT46V64M16TG-6T:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
CY7C1362C-166AJXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |