English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8, 128 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29C4G96MAZBBCJG-48 ITMicron Technology |
IC FLASH RAM 4GBIT PAR 168WFBGA |
|
MT48LC8M16A2P-75:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT27C512R-90PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
AT27BV512-70JURoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT29F64G08AEAAAC5-Z:AMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
71421LA25PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
W632GG6MB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IDT71V256SA20YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
M25P40-VMN3PBMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO |
|
709289L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT48LC8M16A2P-6A IT:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT29F128G08CKCCBH2-12Z:CMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
W25Q256FVCIPWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
