类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95040-RMB6TGSTMicroelectronics |
IC EEPROM 4KBIT SPI 8UFDFPN |
|
AT25DF041A-MH-YAdesto Technologies |
IC FLASH 4MBIT SPI 70MHZ 8UDFN |
|
AT93C66A-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IDT71V3577YS85PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7140SA100PF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
7130LA20PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
NM27C128N120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 128KBIT PARALLEL 28DIP |
|
MT46H16M16LFBF-6 IT:AMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
IS61NLF51236-6.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V416L10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IS62WV5128DBLL-45BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
CY7C027V-15AXITCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
W9751G6KB-18Winbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84WBGA |