类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 375 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NVP102418-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V65802S133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
N25Q032A11ESF40GMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 16SO |
|
AT93C66A-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT48H16M32L2B5-8 ITMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT41K512M8RH-125 AAT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
7006L55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IS61VPS51236A-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
R1LV0808ASB-5SI#B0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
W25Q64JVXGJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8XSON |
|
AT49BV002T-90VIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
M25PE10-VMN6TP TRMicron Technology |
IC FLASH 1MBIT SPI 75MHZ 8SO |
|
IS42S32800D-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |