类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT6116LA35TPRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
AT24C04B-PURoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
AT24C128-10PIRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8DIP |
|
IDT71V65802S133BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71421SA55JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IDT70824S35PFRenesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
CY7C0241E-15AXCTCypress Semiconductor |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
71V35761S166BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
RC28F128P30TF65AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
70V9189L6PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
W25Q32BVSSJP TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
M29W320EB70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IDT71P71604S167BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |