类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1.125Mb (128K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32BVSSJP TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
M29W320EB70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IDT71P71604S167BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
AT25320T1-10TCRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 14TSSOP |
|
70V27L20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT29F4G16ABADAWP:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
S34ML01G200TFA003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
M29W128FH70ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
CAT24M01YE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 8TSSOP |
|
S29GL256N11FFIIH0Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS29GL01GS-11DHB02Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT53E768M32D4DT-046 WT:EMicron Technology |
IC DRAM 24GBIT 2.133GHZ 200VFBGA |
|
AT27C512R-55TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |