English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S34ML01G200TFA003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
M29W128FH70ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
CAT24M01YE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 8TSSOP |
|
S29GL256N11FFIIH0Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS29GL01GS-11DHB02Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT53E768M32D4DT-046 WT:EMicron Technology |
IC DRAM 24GBIT 2.133GHZ 200VFBGA |
|
AT27C512R-55TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
NM27C256VE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT49BV160C-70CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 46CBGA |
|
W25Q16JWUUIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
AT49LV161-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MTFC8GAMALBH-AIT ES TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
MT47H32M16CC-3E:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
