类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NM27C256VE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT49BV160C-70CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 46CBGA |
|
W25Q16JWUUIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
AT49LV161-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MTFC8GAMALBH-AIT ES TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
MT47H32M16CC-3E:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IS63LV1024L-12BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 36MINIBGA |
|
MT48LC8M8A2P-6A:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT29F768G08EECBBJ4-37:BMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
IS62WV6416DBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT25DF041A-MH-TAdesto Technologies |
IC FLASH 4MBIT SPI 70MHZ 8UDFN |
|
AT24HC02BN-SH-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
MT29F128G08CECABH1-12ITZ:A TRMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |