类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.75V ~ 5.25V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 34-PowerCap™ Module |
供应商设备包: | 34-PowerCap Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14E256L-SZ45XCTCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
S29GL256P90TFIL10DCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
W25Q32BVSSJG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
70V26L25JI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
STK16C88-WF45Cypress Semiconductor |
IC NVSRAM 256KBIT PARALLEL 28DIP |
|
MT47H64M16HR-25 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AT49BV802AT-70TI-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
71321SA55PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MT29F128G08CBCBBH6-6R:BMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
AT28C17-20JCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
AK6480BLAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 8KBIT SPI 1MHZ 8SON |
|
USBF1600T-I/MFVAORoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
MT48LC2M32B2P-55:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |