English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V256SA12PZRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
7006L15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
S25FL132K0XBHIS20Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
IS42SM32400G-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IS41LV16100D-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
7014S12JRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 52PLCC |
|
AT29BV020-20TURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AS4C64M16D3-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
IS61LPS25618A-200B2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1315BV18-167BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS61LPS12836A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 165PBGA |
|
7025S25JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
M25P16S-VMN6PMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO |
