类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FS064SAGMFM013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IDT71T75902S75BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
MT29F2G01AAAEDH4-ITX:EMicron Technology |
IC FLASH 2GBIT SPI 63VFBGA |
|
MT29F256G08EECBBJ4-10ES:B TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
W25X10BVSNIGWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
|
W25Q80BVDAIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8DIP |
|
MT48LC4M32B2F5-6:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
M93C46-BN6STMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
IS29GL512S-11TFV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
71342SA55JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS62WV12816DBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
S29GL128P90FFSS00Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS42S16320B-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |