类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UFDFPN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C17E-20JCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
CY62256VLL-70ZRXITCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
IDT71V67603ZS133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V30S55TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT29F1T08EMHAFJ4-3R:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
M28W640FCB70ZB6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
IS61QDB21M36-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT53B512M32D2DS-062 AIT:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
N25Q512A13G1240EMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
AT27BV1024-12JURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
|
FT24C16A-UDR-BFremont Micro Devices |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
NM93C46ANSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 8DIP |
|
BR24T08-WROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |