English
简体中文
BOX STEEL GRAY 7.99"L X 3.27"W
IC DRAM 64MBIT PARALLEL 90TFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1019BN-15ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
AT24C512-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
IS43TR81280B-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
IS61LF102418A-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
M24512-WMW6TGSTMicroelectronics |
IC EEPROM 512KBIT I2C 1MHZ 8SO |
|
IS49NLS93200-25BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
R1LP5256ESP-7SI#S0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
IDT71T75702S80PF8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1386D-200AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
FT24C256A-UMR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8MSOP |
|
AS4C32M16SA-7BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54FBGA |
|
24LC044T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
W632GU8KB15IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |