类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, FL1-K |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M25P128-VME6GBMicron Technology |
IC FLSH 128MBIT SPI 54MHZ 8VDFPN |
|
M25PE10-VMN3TPB TRMicron Technology |
IC FLASH 1MBIT SPI 75MHZ 8SO |
|
IS42S16160D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MTFC4GMWDM-3M AIT TRMicron Technology |
IC FLASH 32GBIT MMC 153TFBGA |
|
AT28C64E-12JURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
M58LT128HSB8ZA6F TRMicron Technology |
IC FLASH 128MBIT PARALLEL 80LBGA |
|
MT48LC64M4A2P-6A:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
S25FL129P0XMFV003MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS61VF102418A-7.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT29F768G08EEHBBJ4-3R:BMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
MT47H128M4B6-3:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT47H32M16CC-5E IT:BMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IDT70T633S12DDIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 144TQFP |