English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 52 MHz |
| 写周期时间 - 字，页: | 85ns |
| 访问时间: | 85 ns |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 80-LBGA |
| 供应商设备包: | 80-LBGA (10x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC64M4A2P-6A:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
S25FL129P0XMFV003MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS61VF102418A-7.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT29F768G08EEHBBJ4-3R:BMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
MT47H128M4B6-3:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT47H32M16CC-5E IT:BMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IDT70T633S12DDIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 144TQFP |
|
AT45DB321C-CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI 40MHZ 24CBGA |
|
DS28E10R+UMaxim Integrated |
IC EPROM 224B 1-WIRE SOT23-3 |
|
W25Q64FVSFJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
AT45DB642D-CNUAdesto Technologies |
IC FLASH 64MBIT SPI 66MHZ 8CASON |
|
IDT71016S12PHGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS61WV25616BLL-10BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
