类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NM93C56LZM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 250KHZ 8SO |
|
PC28F00AP33EF0Micron Technology |
IC FLASH 1GBIT PAR 64EASYBGA |
|
N25Q256A13ESFA0F TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
IS42VM32400G-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
71V25761S183BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S-93L66AD0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
IDT71V3557SA80BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT28F800B5SG-8 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 44SOP |
|
AS6C6264A-70PCNAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28DIP |
|
AT93C56A-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT53B256M32D1DS-062 AIT:C TRMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
MT49H64M9SJ-25E:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
IS42S16800D-7BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |