English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14B256L-SZ35XICypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
AT27LV010A-70JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
AT49F001ANT-55JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT93C56-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
CAT28C16AL20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
S29GL064S80FHIS13Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
AT28BV16-30SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AS4C64M16MD1-6BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
IS42RM32160C-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
IS42S16400D-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
|
IDT71V3577S85PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
R1LV0108ESA-7SI#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
70V25L55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
