类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 1ms |
访问时间: | 250 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25160N-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
W25Q257FVFIFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS42VM32200K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W632GU8MB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
AT25256A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
S34ML08G201TFB003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL 48TSOP I |
|
IS49NLS18160-25BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
AT29LV512-15TIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V67602S133BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
R1EX25064ASA00I#S0Renesas Electronics America |
IC EEPROM 64KBIT SPI 5MHZ 8SOP |
|
MT48LC4M32B2B5-6:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT6116SA35TPRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
IS42S32800G-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |