类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 667 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-VFBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25256A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
S34ML08G201TFB003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL 48TSOP I |
|
IS49NLS18160-25BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
AT29LV512-15TIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V67602S133BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
R1EX25064ASA00I#S0Renesas Electronics America |
IC EEPROM 64KBIT SPI 5MHZ 8SOP |
|
MT48LC4M32B2B5-6:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT6116SA35TPRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
IS42S32800G-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
S25FL127SABBHIC03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS45S16100C1-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 60MINIBGA |
|
IDT71V016SA20YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
MT47H128M8CF-25:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |