类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 4Gb (256M x 16)(NAND), 2G (128M x 16)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 208 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 137-VFBGA |
供应商设备包: | 137-VFBGA (13x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25Q032A13ESEH0F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SO |
|
70V9369L7PFI8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
MTFC4GMVEA-1M WTMicron Technology |
IC FLASH 32GBIT MMC 153WFBGA |
|
AT28HC256-90LM/883-696Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
93AA86BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
7024L35PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT28F640J3FS-115 GMETMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
AT49BV002ANT-70VIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
AS4C32M16MD1-5BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FPBGA |
|
24FC64-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIJ |
|
BR24G32-3AROHM Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8DIP |
|
MT48H4M16LFB4-8Micron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
AT93C57W-10SIRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |