类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | 33 MHz |
写周期时间 - 字,页: | 50µs |
访问时间: | - |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S32800B-7BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90LFBGA |
|
IDT71V124SA20YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S29GL256N11FFIS30Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT53D512M32D2DS-046 AAT:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
AT49BV6416T-70TURoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IS43LR16160F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
M27C4002-80C6TRSTMicroelectronics |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
IDT71256SA20YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IDT71V256SA10YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
NP8P128A13TSM60EMicron Technology |
IC PCM 128MBIT PARALLEL 56TSOP |
|
MX25U8032EMDI-12GMacronix |
IC FLSH 8MBIT SPI/QUAD I/O 8VSOP |
|
CY7C197N-25PXCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 24DIP |
|
IS61NLF51236-6.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |