English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.5V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32200C1-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AT24C32AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8MAP |
|
M29W320ET70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
MT29F32G08ABAAAWP-IT:AMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
AT27LV256A-70RCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
S34MS04G200BHB000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
MT48LC16M16A2TG-7E:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
NM27C010T120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
JS28F256M29EBHB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M29W200BB70N1Micron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
IDT70P3537S233RMRenesas Electronics America |
IC SRAM 18MBIT PAR 576FCBGA |
|
M29W128FL70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
CAT28C16AG20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 32PLCC |
