类型 | 描述 |
---|---|
系列: | GL-N |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8, 16M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29LV512-20TCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V3559SA75BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
W25Q32FVZPJF TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS41C16105C-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
IS61DDB21M36-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IS41LV16105B-60TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
IS43TR16640B-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
S34ML08G101TFA003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL 48TSOP I |
|
93AA46XT/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CYD04S18V-167BBCCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 256FBGA |
|
IDT71V3557SA75BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT46H32M16LFBF-6:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
7130LA25J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |