English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S32400E-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
M27C512-15F1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
IDT71V2559S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70V9089L12PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7054S25PRFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |
|
AT27C512R-15PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
W25Q256FVEJFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS46TR16256AL-125KBLA25-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS61LF102418A-7.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT34C02-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
IDT71V67603S150PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT93C56A-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
MT49H32M18CSJ-25E IT:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
