类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q256FVEJFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS46TR16256AL-125KBLA25-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS61LF102418A-7.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT34C02-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
IDT71V67603S150PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT93C56A-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
MT49H32M18CSJ-25E IT:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
7140LA20PF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
CAT28C64BXI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT70V7339S166DDIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 144TQFP |
|
AT49F040A-70JURoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
M28W320HSB70ZA6EMicron Technology |
IC FLASH 32MBIT PARALLEL 64TFBGA |
|
AT24C16B-TH-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |