类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (264 Bytes x 2048 pages) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 14ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C2M32S-6TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS61LF51218A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61VF102418A-6.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
NM93C46EMSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 14SOIC |
|
IS42S81600E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY14B104L-BA25XCTCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
CYD36S72V18-167BGXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 484FBGA |
|
MT46H32M32LFB5-6 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
MT29F64G08CBABAWP-M:B TRMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
AT28C256F-15PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IS25WP016-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SERIAL 16SOIC |
|
IS46TR85120BL-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
IS61LF102436A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100TQFP |