English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 17ns |
| 访问时间: | 17 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32400E-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
W25P40VSNIG T&RWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
709349L6PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
IDT71V67603S166PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1515SV18-250BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IDT71V67903S80PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT21CS01-STUM16-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ SOT23 |
|
MT49H8M36SJ-5:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
M25P80-VMW6STMicroelectronics |
IC FLASH 8MBIT SPI 75MHZ 8SO W |
|
CY7C09379V-12ACCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
AT29LV512-20JCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
R1EX24002ASAS0I#S0Renesas Electronics America |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
|
IS42S16400F-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
