类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 5ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27LV512A-70RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
MT49H16M36SJ-25:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
IS46TR16640C-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT45D081-TCRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 10MHZ 28TSOP |
|
AT27BV010-15JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
N25Q256A13ESF40F TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
24LC1025-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
CY7C1413JV18-300BZCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IDT70824S25PF8Renesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
MT48LC4M32B2B5-6:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
70V18L15PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
MT44K32M18RB-125F:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT24MAC402-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |