CAP CER 1206 15PF 16V ULTRA STAB
IC DRAM 512MBIT PARALLEL 84VFBGA
IC FLASH 1GBIT PARALLEL 48TSOP I
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25040AY6-10YH-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 8MINI MAP |
|
MT53B256M32D1DS-062 AAT:C TRMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
AT28C64-12TCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
71V35761S183BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
PC48F4400P0VB0EHMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
AT27C512R-70TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IDT71V35761S200BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT47H64M8SH-25E AIT:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS43TR16512AL-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
W25Q256FVBIG TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
IS42S32800B-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71V25761YSA200BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS62WV12816BLL-55T-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |